High Efficiency Class E Amplifiers for Mobile and Base Station Applications
نویسندگان
چکیده
We have progressed in the analysis and design of Class E amplifiers over the past year. An accurate analysis of the nonlinear output capacitance and of the finite feed inductance has led to new design techniques which have been verified through a prototype MOSFET Class E PA. Also, we have demonstrated that the duty cycle of the switch can be varied to increase the maximum operating frequency of the amplifier. Nevertheless, this upper frequency remains limited fundamentally by the output capacitance to peak current ratio of the switch. Power is constrained by the breakdown voltage. Thus, devices such as HBTs and GaN HEMTs, with moderate to high breakdown voltage and low output capacitance, are the most promising candidates for Class E operation in the 1 – 10 GHz region.
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